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| SUP90N06-05L New Product Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 FEATURES rDS(on) (W) ID (A) 90 a 0.0049 @ VGS = 10 V 0.0055 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature APPLICATIONS D Automotive Such As - High-Side Switch - Motor Drives - 12-V Battery D Synchronous Rectification TO-220AB D DRAIN connected to TAB G GDS Top View Ordering Information: SUP90N06-05L--E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulse Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 60 "20 90a 90a 240 75 280 300b -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (Free Air) Junction-to-Case Notes a. Package limited. b. See SOA curve for voltage derating. Document Number: 73037 S-41504--Rev. A, 09-Aug-04 www.vishay.com Symbol RthJA RthJC Limit 62.5 0.5 Unit _C/W 1 SUP90N06-05L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0039 0.0044 0.0049 0.0055 0.0083 0.0103 S W 60 1 3 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.33 W ID ^ 90 A, VGEN = 10 V, Rg = 2.5 W VDS = 30 V, VGS = 10 V, ID = 90 A , , f = 1.0 MHz VGS = 0 V, VDS = 25 V, f = 1 MHz 12900 1060 700 1.3 200 50 33 22 130 110 280 35 200 165 420 ns 300 nC W pF Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 90 A, VGS = 0 V IF = 90 A, di/dt = 100 A/ A A/ms 1.1 55 3.6 0.1 90 240 1.5 82 5.4 0.22 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 73037 S-41504--Rev. A, 09-Aug-04 SUP90N06-05L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 5 V 200 I D - Drain Current (A) 4V I D - Drain Current (A) 200 250 Vishay Siliconix Transfer Characteristics 150 150 100 100 TC = 125_C 50 25_C -55_C 50 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Transconductance 480 400 g fs - Transconductance (S) 320 240 160 80 0 0 20 40 60 80 100 125_C TC = -55_C r DS(on) - On-Resistance ( W ) 25_C 0.006 0.008 On-Resistance vs. Drain Current VGS = 4.5 V 0.004 VGS = 10 V 0.002 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) 18000 15000 C - Capacitance (pF) 12000 9000 6000 3000 0 0 Crss 5 10 Capacitance 20 VGS = 30 V ID = 90 A Gate Charge Ciss V GS - Gate-to-Source Voltage (V) 16 12 8 4 Coss 0 15 20 25 30 35 40 0 50 100 150 200 250 300 350 400 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) www.vishay.com Document Number: 73037 S-41504--Rev. A, 09-Aug-04 3 SUP90N06-05L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 100 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 -50 1 0 I S - Source Current (A) VGS = 10 V ID = 30 A Source-Drain Diode Forward Voltage rDS(on) - On-Resiistance (Normalized) TJ = 150_C 10 TJ = 25_C -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 1000 Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 74 72 100 I Dav (a) IAV (A) @ TA = 25_C V (BR)DSS (V) ID = 10 mA 70 68 66 64 62 10 1 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) 60 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 73037 S-41504--Rev. A, 09-Aug-04 SUP90N06-05L New Product THERMAL RATINGS 200 Vishay Siliconix Maximum Drain Current vs. Case Temperature 1000 Safe Operating Area 10 ms 160 I D - Drain Current (A) I D - Drain Current (A) 100 Limited by rDS(on) 100 ms 120 10 80 Limited by Package 1 ms 10 ms, 100 ms, dc 1 TC = 25_C Single Pulse 40 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse Normalized Thermal Transient Impedance, Junction-to-Case 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 73037 S-41504--Rev. A, 09-Aug-04 www.vishay.com 5 |
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